0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SC3583 features nf1.2dbtyp.@f=1.0ghz ga 13 db typ. @f = 1.0 ghz absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 20 v collector to emitter voltage v ceo 10 v emitter to base voltage v ebo 1.5 v collector current i c 65 ma total power dissipation p tot 200 mw junction temperature t j 150 storage temperature range t stg -65to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =10v,i e =0 1.0 a emitter cutoff current i ebo v eb =1v,i e =0 1.0 a dc current gain *1 h fe v ce =8v,i c = 20 ma 50 100 250 gain bandwidth product f t v ce =8v,i c =20ma 9 ghz feed-back capacitance cre *2 v cb =10v,i e = 0, f = 1.0 mhz 0.35 0.9 pf insertion power gain | v ce =8v,i c =20ma,f=1.0ghz 11 13 db maximum available gain mag v ce =8v,i c = 20 ma, f = 1.0 ghz 15 db noise figure nf v ce =8v,i e = 7 ma, f = 1.0 ghz 1.2 2.5 db *1.pulse measurement pw 350s, duty cycle 2% *2.the emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge. h fe classification marking r33 r34 r35 rank r33/q r34/r r35/s h fe 50 100 80 160 125 250 smd type ic smd type transistors smd type ic smd type transistors smd type transistors smd type transistors smd type ic smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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